Influence of DC Magnetron Sputtering Power on Structural, Topography, and Gas Sensor Properties of Nb2O5/Si Thin Films.

This study focuses on synthesizing Niobium pentoxide (Nb2O5) thin films silicon wafers and quartz substrates using DC reactive magnetron sputtering for NO2 gas sensors. The undergo annealing in ambient air at 800 °C 1 hr. Various characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive spectroscopy (EDS), Hall effect measurements, sensitivity are employed to evaluate the structural, morphological, electrical, sensing properties of Nb2O5 films. XRD analysis confirms polycrystalline nature hexagonal crystal structure Nb2O5. optical band gap values demonstrate a decrease from 4.74 3.73 eV as power is increased 25 75 W. AFM images illustrate progressive increase particle size ranging (41.86) (45.56) nm, with varying between Additionally, EDS validates rise Nb content, increasing 12.2 at. % 20.1 %, corresponding power. measurements show that all exhibit n-type charge carriers, leads decreased carrier concentration enhanced mobility. sensor's sensitivity, response, recovery time were evaluated various operating temperatures. sensor exhibited an optimal 28.6% 200 when was set 50